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氧化锌是一种重要的压电与光电材料,用粉靶代替常规的固体陶瓷靶溅射沉积ZnO薄膜,对基底的加热温度、溅射气压和氧气的混合比率等沉积条件对氧化锌薄膜特性的影响进行了研究,主要对沉积在玻璃基片上的ZnO薄膜进行了X-射线衍射(XRD)、扫描电镜(SEM)、原子力显微镜(AFM)以及台阶仪的测量和分析比较,用粉靶溅射的ZnO薄膜具有很好的C轴长相和很窄的衍射峰半宽(0.2°～0.27°)。因为ZnO膜在C轴方向有很强的压电性,从而也说明了用粉靶溅射的ZnO薄膜具有很好的压电特性。分析和测量结果显示用粉靶溅射ZnO薄膜的最佳条件是:(1)基片加热温度为300～400℃。(2)氧气的混合含量为0.5～0.8.(3)溅射气压为1～2 Pa。得出了利用粉靶溅射制备的ZnO薄膜与用陶瓷靶制备同样具有很好的性能。
Zinc oxide is an important piezoelectric and optoelectronic materials, the powder target instead of the conventional solid ceramic sputtering sputtering ZnO film, the substrate heating temperature, sputtering pressure and mixing ratio of oxygen and other deposition conditions on the characteristics of zinc oxide film The effects of XRD, scanning electron microscopy (SEM), atomic force microscopy (AFM), and step-by-step measurements on the ZnO thin films deposited on a glass substrate were investigated. The ZnO film has a very good C-axis phase and a narrow half-width of the diffraction peak (0.2 ° ~ 0.27 °). Because ZnO film in the C-axis direction has a strong piezoelectric, which also shows that the sputtering target ZnO film has good piezoelectric properties. Analysis and measurement results show that the optimum conditions for sputtering ZnO film with a powder target are: (1) substrate heating temperature is 300 ~ 400 ℃. (2) The oxygen content is 0.5 to 0.8 (3) The sputtering pressure is 1 to 2 Pa. It is concluded that ZnO thin films prepared by powder sputtering have the same good performance as ceramic targets.