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超导转化温度高于液氮沸点温度77K的高温超导体刚一问世,国际上立即掀起了一场高温超导材料的研究热潮,以求研制出超导临界温度高、微波表面电阻R_s小、超导性能稳定的高温超导体.经过几年的努力,某些高性能高温超导材料的研制已日趋成熟,且逐渐步入实用化阶段.在微波领域里的应用是高温超导材料应用的一个重要方面.高温超导微带谐振器具有Q值高、体积小、重量轻的突出优点而倍受重视,它不仅可作为微波器件(如低相噪高温超导振荡电路的选频器件)使用,而且还可用来研究超导薄膜或介质衬底材料的微波性能.1 设计原理根据电磁理论,微带谐振器的无载品质因数Q_o有如下关系:式中Q_c为表征导体Ohm损耗的品质因数,Q_ε为表征介质衬底材料微波损耗的品质因数,Q_r为表征辐射损耗的品质因数.根据定义,Q_o还可表示为Q_0=ω_0W_0/P,(2)式中ω_o为谐振角频率,W_O为谐振器的总储能,P为谐振器的总耗能,即
Superconducting transition temperature is higher than the boiling point of liquid nitrogen temperature 77K high temperature superconductor just come out, the international immediately set off a high-temperature superconducting materials research boom, in order to develop a high critical temperature superconducting, microwave surface resistance R_s small Conductive high-temperature superconductor stable performance. After several years of efforts, the development of some high-performance high-temperature superconducting materials has matured, and gradually into the practical stage.In the field of microwave applications is an important high-temperature superconducting materials applications Aspects.High-temperature superconducting microstrip resonators with high Q value, small size, light weight prominent advantages and much attention, it can not only be used as microwave devices (such as low-noise high-temperature superconducting oscillator circuit frequency selection device) But also can be used to study the microwave performance of the superconducting thin film or dielectric substrate material.1 Design Principle According to the electromagnetic theory, the unloaded quality factor Q_o of the microstrip resonator has the following relationship: Q_c is the quality factor characterizing Ohm loss of the conductor, Q_ε is the quality factor that characterizes the microwave loss of the dielectric substrate material and Q_r is the quality factor that characterizes the radiation loss. By definition, Q_o can also be expressed as Q_0 = ω_0W_0 / P, (2) where ω_o is the resonance angular frequency , W_O is the total energy storage of the resonator, P is the total energy consumption of the resonator, ie