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高密度等离子体刻蚀是当今超大规模集成电路制造过程中的关键步骤。随着集成电路中器件尺寸的缩小及器件集成密度的提高,对刻蚀过程终点的准确判断是目前所面临的一个严峻考验,传统的 OES 终点检测技术已经远远不能满足深亚微米刻蚀工艺需求.讨论 IEP 终点检测技术的原理,针对多晶硅栅的等离子体刻蚀工艺,讨论了 IEP 终点检测技术在深亚微米刻蚀工艺中的应用,IEP 预报式终点检测技术已经运用在新近研发的 HDP 刻蚀机的试验工艺上,最后对 IEP 终点检测技术未来的发展趋势进行了展望.
High-density plasma etching is a key step in the fabrication of very large scale integrated circuits today. With the shrinking of device size and device integration density in integrated circuits, the accurate judgment of the end point of the etching process is a severe test to date. The traditional OES endpoint detection technology is far from satisfying the deep sub-micron etching process Requirements. The principle of IEP endpoint detection technology is discussed. The application of IEP endpoint detection technology in deep sub-micron etching process is discussed in view of the plasma etching process of polysilicon gate. The IEP prediction endpoint detection technology has been applied in newly developed HDP Etch machine test process, the last IEP endpoint detection technology trends in the future prospects.