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研究了一种新型的化学机械抛光方法,使用以KMnO 4作为氧化剂的强氧化性化学机械抛光液(SOAS)进行化学机械抛光。研究了在4H-SiC硅面和碳面的化学机械抛光过程中,SOAS溶液中KMnO 4的浓度对抛光质量的影响。使用原子力显微镜(AFM)和精密电子天平,分别测试了表面粗糙度和去除率。结果表明,适量的KMnO 4可以大幅度提高4H-SiC的化学机械抛光去除率,同时可提高4H-SiC衬底的表面抛光质量。
A new type of chemical mechanical polishing method was investigated using chemical mechanical polishing (SOAS) with KMnO 4 as oxidant. The effect of concentration of KMnO 4 in SOAS solution on the polishing quality was investigated in the chemical mechanical polishing of 4H-SiC silicon and carbon surfaces. Surface roughness and removal rates were measured using an atomic force microscope (AFM) and a precision electronic balance, respectively. The results show that the appropriate amount of KMnO 4 can greatly improve the chemical mechanical polishing removal rate of 4H-SiC and improve the surface polishing quality of 4H-SiC substrate.