Investigation on the strain of SiGe ／Si heteroepitaxial system during high temperature annealing by

• 作 者: CHENChang－Chun ZHANGShi－Li
• 机 构: LaboratoryofNuclearAnalysesandTechniques,KungligaTekniskaHoegskolan
• 出 处: 核技术：英文版
• 发表日期: 2001年4期
• 关键词: 合金薄膜 高温退火 集成电路 Strain SiGe epilayer RBS/Channeling High temperature anneals.
• 基金项目: 国家自然科学基金

The influence of the high temperature processing on the strain stored in SiGe hetero epilayer was studied by means of RBS/Channeling. Channeling angularscan along the ＜ 110 ＞ axial direction in the (100) plane was used to characterize the tetragonal disto