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采用改进化学汽相沉积(MCVD)与溶液掺杂结合的方法探讨了掺铋石英光纤预制棒的制备工艺,研制了具有红外宽带发光特性的掺铋SiO2-Al2O3-GeO2光纤。研究了不同掺锗浓度与氧气浓度条件下制备的预制棒的光谱特性。掺铋预制棒切片在532nm和808nm光激发下,产生中心波长为1146nm,半峰全宽为204nm与中心波长为1281nm,半峰全宽为250nm的近红外发光。拉制的光纤在808nm光激发下,产生了中心波长为1265nm,半峰全宽为280nm的近红外发光;在976nm光激发下,观察到光纤产生中心波长为1125nm,半峰全宽为460nm的超宽带近红外发光。光纤与预制棒的发光存在明显差异。通过控制预制棒制备工艺可以使铋掺杂光纤的发光满足实用的需要。
The preparation technology of bismuth-doped silica optical fiber preform was discussed by the combination of modified chemical vapor deposition (MCVD) and solution doping. The bismuth-doped SiO2-Al2O3-GeO2 optical fiber with broadband infrared light emission was developed. The spectral characteristics of preform rods prepared under different concentrations of germanium and oxygen were studied. Bismuth-doped preform sections were excited by 532nm and 808nm light to produce near-infrared luminescence with a center wavelength of 1146nm, a full width at half maximum of 204nm, a central wavelength of 1281nm and a full width at half maximum of 250nm. The drawn optical fiber at 808nm light excitation, resulting in a center wavelength of 1265nm, full width at half maximum 280nm near infrared light; at 976nm optical excitation, the observed optical fiber produces a central wavelength of 1125nm, the full width at half maximum of 460nm Ultra-wideband near infrared light. There is a significant difference between the light emission of the optical fiber and the preform. By controlling the preform preparation process can make the bismuth doped fiber to meet the practical needs of light-emitting.