Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells

• 作 者: 成步文 李代宗 黄昌俊 张春晖 于卓 余金中 王启明
• 出 处: 半导体学报
• 发表日期: 2000年04期
• 关键词: Wells confinement confined phonon nanometer exciton sized fabrication simplified

Strained SiGe/Si multiple quantum wells(MQWs) were grown by cold|wall ultrahigh vacuum chemical vapor deposition (UHV/CVD).Photoluminescence measurement was performed to study the exciton energies of strained Si 0 84 Ge 0 16 /Si MQWs with SiGe well widths ranging from 4 2nm to 25 4nm.The confinement energy of 43meV is found in the Si 0 84 Ge 0 16 /Si MQWs with well width of 4 2nm.The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model.Experimental and theoretical confinement energies are in good agreement.

Strained SiGe / Si multiple quantum wells (MQWs) were grown by cold | wall ultrahigh vacuum chemical vapor deposition (UHV / CVD). Photoluminescence measurement was performed to study the exciton energies of strained Si0 84 Ge016 / Si MQWs with The confinement energy was calculated from solving the problem of a particle confined in 4 2nm to 25 4nm. The confinement energy of 43meV was found in the Si 0 84 Ge 0 16 / Si MQWs with a well width of 4 2nm. a single finite rectangular poteintial well using one band effect mass model. Experimental and theoretical confinement energies are in good agreement.