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本文考察了半导体不稳定性机理,以便更好地了解这一非常复杂的现象。有了这种深入了解,在设计和生产中,就可将半导体的不稳定性降至最小。给出了下面几个问题的基本设想、图表和参改资料;由SiO_2上表面电荷引起的不稳定性;氧化物表面上的导电/横向电荷扩散;SiO_2内电荷引起的不稳定性;双层介质结构中的不稳定性;发射极-基极结雪崩引起的h_(FE)退化,以及寄生作用引起的不稳定性。介绍了减少制造组装失效的实例研究。本文叙述了其电学现象(如h_(FE)下降)的原因及应采取的正确措施。该研究体现了厂商与用户携手合作,共同寻找恰当措施的重要性。 本文还考查了电诊断技术,比如结的电流-电压特性曲线。介绍了用阈值测试来测定由于不适当的布局布线以及离子沾污所引起的寄生MOS效应,可以用来确定半导体中的不稳定区域。本文还讨论了高温烘焙和加偏压工作寿命试验过程以及其在鉴别和测定不稳定原因时的用途。 最后,介绍了去除半导体器件上的各种材料和/或覆盖层的方法。该方法可用来确定在生产过程中,那一步有可能引起异常电参数。
This article examines the mechanism of semiconductor instability in order to better understand this very complex phenomenon. With this in-depth understanding, the semiconductor instability can be minimized in design and production. The basic assumptions, charts and reference data for the following questions are given: instability due to the upper surface charge of SiO 2; conductive / lateral charge diffusion on the oxide surface; instability due to charge within SiO 2; Instability in the dielectric structure; h_ (FE) degradation due to emitter-base junction avalanche and parasitic instability. An example study to reduce the failure of manufacturing assembly is presented. This article describes the reasons for its electrical phenomena (such as h_ (FE) decline) and the correct measures to be taken. The study shows the importance of vendors and users working together to find appropriate measures. This article also examines the electrical diagnostic techniques, such as junction current-voltage characteristics. The use of threshold testing to measure parasitic MOS effects due to improper placement and routing and ionic contamination can be used to determine areas of instability in semiconductors. This article also discusses the high-temperature baking and biasing operating life test procedures and their use in identifying and determining the causes of instability. Finally, methods for removing various materials and / or overlays on semiconductor devices are described. This method can be used to determine which step in the production process is likely to cause abnormal electrical parameters.