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英特尔已经展示了具有众多业界领先特性的世界上最先进的90nm逻辑工艺。这一新工艺计划在2003年应用于生产,用来制造微处理器和其它英特尔产品。 在生产中实施了世界上最小的CMOS晶体管:50nm栅极长度(更高性能、更低功耗) 在生产中实施了最薄的氧化物栅极:仅1.2nm(厚度小于5个原子层) 最先在生产中使用性能增强型应变硅。
Intel has demonstrated the world’s most advanced 90nm logic technology with many industry-leading features. The new process is planned for production in 2003 to make microprocessors and other Intel products. The world’s smallest CMOS transistor was implemented in production: 50nm gate length (higher performance, lower power consumption) The thinnest oxide gate was implemented in production: only 1.2nm (less than 5 atomic layers thick) The first to use performance-enhanced strained silicon in production.