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对国产工艺的电荷耦合器件进行了质子、中子、~(60)Co-γ射线辐照试验,研究了不同粒子辐照对器件饱和输出电压的影响。试验结果显示在质子、γ射线辐照下,电荷耦合器件的饱和输出电压显著退化,而在1 Me V中子辐照下,饱和输出电压基本保持不变,表现出较好的抗中子能力。分析认为饱和输出电压的退化主要受电离总剂量效应影响,一方面辐射感生界面态导致阈值电压正向漂移使耗尽层可存储最大电荷量下降;另一方面电离辐射损伤使电荷耦合器件片上放大器增益减小导致饱和输出电压下降。
Proton, neutron and ~ (60) Co-γ-ray irradiation experiments were carried out on domestic-made charge-coupled devices. The effects of different particle irradiation on the saturated output voltage were studied. The experimental results show that under the irradiation of protons and γ-rays, the saturated output voltage of the charge-coupled device significantly degrades, while under the 1 Me V neutron irradiation, the saturated output voltage remains basically unchanged, exhibiting better anti-neutron capability . It is considered that the degradation of the saturated output voltage is mainly affected by the total dose effect of ionization. On the one hand, the radiative-induced interface state causes the threshold voltage to drift in the positive direction so that the depletion layer can store the largest amount of charge. On the other hand, ionizing radiation damages the on- Reducing the amplifier gain causes the saturation output voltage to drop.