论文部分内容阅读
本文研究了用无定形氮化硅超细粉原位生长α－Ｓｉ３Ｎ４晶须，晶须生长温度为１４００～１４５０℃，恒温１～４ｈ。讨论了在晶须生长过程中，不同的保护气氛对晶须质量的影响。当晶须在高纯Ｎ２气氛中生长时，得到的晶须中氮含量为３２％～３４％，氧含量为８％～６％，氯含量为０．１％左右。这类晶须中存在着大量的缺陷。当晶须在ＮＨ３气氛中生长时，得到的晶须中氮含量为３９％左右，氧含量为１％，氯含量为０．０１％，在这类晶须的透射电镜照片中几乎看不到缺陷。
In this paper, the in-situ growth of α-Si3N4 whiskers with amorphous silicon nitride ultrafine powder was studied. The growth temperature of whiskers was 1400-1450 ℃ and the temperature was kept for 1 ~ 4h. The influence of different protective atmospheres on the whisker quality was discussed during the whisker growth. When whiskers grow in a high purity N2 atmosphere, the resulting whiskers have a nitrogen content of 32% to 34%, an oxygen content of 8% to 6%, and a chlorine content of about 0.1%. There are a number of defects in this type of whisker. When whiskers are grown in an NH3 atmosphere, the resulting whiskers have a nitrogen content of about 39%, an oxygen content of 1%, and a chlorine content of 0.01%, which are hardly visible in the transmission electron micrographs of such whiskers defect.