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研究了Zn在InP、InGaAsP以及InGaAsP/InP中的扩散,扩散结深均与时间的平方根成正比.对于InGaAsP/InP单异质结,扩散结深还与InGaAsP覆盖层的厚度x_0有关.推导出其结深与扩散时间的函数关系为x_j/t~(1/2)=-x_0/(rt~(1/2))+I.
The diffusion of Zn in InP, InGaAsP and InGaAsP / InP is studied, and the diffusion junction depth is proportional to the square root of time. For InGaAsP / InP single heterojunction, the diffusion junction depth is also related to the thickness x_0 of the InGaAsP cladding layer. The relationship between the junction depth and diffusion time is x_j / t ~ (1/2) = - x_0 / (rt ~ (1/2)) + I.