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本文提出了对半导体器件进行加压充氮检漏和测试器件漏气速率的实验研究方法。给出了一部分器件的漏气速率的测试结果。实验结果表明,同一器件用各种测试方法测得的结果符合得比较好。一些器件的测试结果与用Kr~(85)放射性流法测得的漏气速率的结果进行了比较,初步的结论是,除了个别的器件外,这两种方法测得的结果是比较一致的。从实验上和理论上都证明了加压充氮检漏法作为部分粗检漏及精检漏的方法是切实可行的。文中给出了加压充氮检漏或筛选的工艺方法。初步地总结了此种方法的优缺点。
In this paper, we propose an experimental method for nitrogen leak detection and leakage testing of semiconductor devices. Part of the device is given the leak rate test results. The experimental results show that the same device with a variety of test methods measured results in line with better. The test results of some devices are compared with the results of the leak rate measured by Kr ~ (85) radioactive flow method. The preliminary conclusion is that the results obtained by these two methods are consistent except for individual devices . Both experimental and theoretical proof of the pressurized nitrogen leak detection method as part of the crude detection leak and the method of detecting leakage is feasible. The article gives a pressurized nitrogen leak detection or screening process. The advantages and disadvantages of this method are summarized.