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从1972年起,硅二极管被用作低温敏感元件,并可从市场上买到。它们在低温下的优点是具有高灵敏度,在30K 以上,V(T)几乎成线性关系。其主要缺点是对磁场敏感,当温度低于30K 时,V(T)呈非线性关系,且价格昂贵。1966年为了进行低温测量,引进了砷化镓二极管,但被在低温下有较高灵敏度和有高温线性特性的硅二极管代替了。在1977年,当 Griffing 和 Shivashankor 指出,由掺磷的砷化镓制成的发光二极管是良好的
Silicon diodes have been used as cryogenic sensors since 1972 and are commercially available. Their advantage at low temperatures is their high sensitivity, with V (T) almost linear above 30K. The main disadvantage is the magnetic field sensitive, when the temperature is lower than 30K, V (T) showed a non-linear relationship, and expensive. In 1966, a gallium arsenide diode was introduced for cryogenic measurement but was replaced by a silicon diode with high sensitivity and high temperature linearity at low temperatures. In 1977, when Griffing and Shivashankor pointed out that light-emitting diodes made of phosphorus-doped gallium arsenide are good