Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

• 作 者: 薛海韵 薛春来 成步文 俞育德 王启明
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Chinese Physics B
• 发表日期: 2009年06期
• 关键词: bandwidth photodetector ultrahigh vacuum photonic diameters fabrication biased c

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates effcient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm2 and 29.4 mA/cm2 at 0 V and a reverse bias of 0.5 V.The detector with a diameter of 30 μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

High quality Ge was epitaxially grown on Si using ultrahigh vacuum / chemical vapor deposition (UHV / CVD). This paper demonstrates the ability to emit germanium-on-silicon pin photodetectors with 0.8 μm Ge with responsivities as high as 0.38 and 0.21 A / W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA / cm2 and 29.4 mA / cm2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 μm, a 3 dB-bandwidth of 4.72 GHz at an At a wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.