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1995年11月27日,由中国电子部主办的北京大学“八五”国家重点科技项目专题鉴定会在燕园圆满结束。 在刚刚过去的第八个五年计划中,北京大学微电子所已成功地研制出铝硅双层布线的800门超高速集成电路和双层铝布线的600门超高速双极集成电路。工作频率达450MHZ。并设计出1000门门阵列电路。标志电路速度水平的19级环振器平均门延迟已突破50PS,达到同样特征尺寸电路的国际先进水平。军口的二分频、四分频硅微波静态分频器实验电路的工作频率大于3.1GHZ,为目前国内最高水平。并在此基础上,开发出了多晶硅发射板超高速电路背面金属化技术、集电区局部补偿技术等
On November 27, 1995, the special appraisal meeting of the “85th Five-Year Plan” national key science and technology project of Peking University hosted by China Electronics Department was successfully concluded in Yan Yuan. In the eighth five-year plan just passed, Microelectronics of Peking University has successfully developed 800 ultra-high speed integrated circuits of aluminum-silicon double-layer wiring and 600 ultra-high speed bipolar integrated circuits of double-layer aluminum wiring. Working frequency of 450MHZ. And designed a 1000 gate array circuit. The average gate delay of the 19-ring resonator with the symbol circuit speed level has exceeded 50PS, reaching the international advanced level of the same feature size circuit. Army mouth of the second frequency, four frequency demultiplication of silicon static frequency divider experimental circuit operating frequency is greater than 3.1GHZ, is currently the highest level. And on this basis, has developed a polycrystalline silicon emission plate super-high-speed circuit on the back of the metal technology, the collector of the local compensation technology