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对β-SiC颗粒表面进行化学镀铜处理,镀铜后SiC复合粉体与铜粉均匀混合。利用热压烧结技术制备β-SiCp/Cu电子封装复合材料,分析了烧结压力对β-SiCp/Cu复合材料的显微组织结构、相对密度和热膨胀系数的影响规律。结果表明:SiC颗粒表面均匀包覆铜,热压烧结后SiC颗粒在复合材料中分布均匀;当烧结温度为730℃,随着烧结压力的增大,体积分数为50%的β-SiCp/Cu复合材料的相对密度逐渐增大,热膨胀系数逐渐升高,热导率逐渐增大。
The surface of β-SiC particles were electroless copper plated, and the SiC composite powder and copper powder were uniformly mixed after copper plating. The β-SiCp / Cu electronic packaging composite was prepared by hot pressing sintering process. The influence of sintering pressure on the microstructure, relative density and thermal expansion coefficient of β-SiCp / Cu composites was analyzed. The results show that the surface of SiC particles are uniformly coated with copper, and the SiC particles are uniformly distributed in the composite after hot pressing. When the sintering temperature is 730 ℃, the volume fraction of β-SiCp / Cu The relative density of the composites gradually increased, the thermal expansion coefficient gradually increased, and the thermal conductivity gradually increased.