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It is pointed out that in terms of the asymptotic transfer method (ATM) suggested by us, the electron subbands and wavefunctions can be solved consistently for both type-I and type-Ⅱ semiconductor multi-quantum-well systems in which the bandedges of conduction bands and valence bands are not flat (oblique lines or curves). As illustrative examples,we performed a self-consistent calculation of electron subbands and wavefunctions of a Ga1-xAlxAs sawtooth superlattice taking account of the variation of the effective mass of electrons with the concentration of Al. We also finished a calculation of electron subbands of type-Ⅱ semiconductor multi-quantum-well systems when an electric field was applied along the growth axis. It is shown that for type-Ⅱ semiconductor multi-quantum-well systems the application of an electric field also results in a strong localization of the eigenstates.
It is pointed out that in terms of the asymptotic transfer method (ATM) suggested by us, the electron subbands and wavefunctions can be solved consistently for both type-I and type-II semiconductor multi-quantum-well systems in which the bandedges of conduction As illustrative examples, we performed a self-consistent calculation of electron subbands and wavefunctions of a Ga1-xAlxAs sawtooth superlattice taking account of the variation of the effective mass of electrons with the concentration of Al. We also finished a calculation of electron subbands of type-II semiconductor multi-quantum-well systems when an electric field was applied along the growth axis. It is shown that for type-II semiconductor multi-quantum-well systems the application of an electric field also results in a strong localization of the eigenstates.