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本文在前文器件掺杂分布优化设计的基础上，实现了结构设计和工艺选择，采用多晶硅发射极技术，研制成功了７７Ｋ下高增益（Ｈ＿（ＦＥ）可达２５０）硅双极晶体管；采用多晶硅发射区和基区重掺杂技术，获得了可与ＣＭＯＳ结构兼容，基区电阻较小的硅低温双极晶体管。
Based on the optimization design of the doping distribution of the previous device, the structural design and process selection are realized. The polysilicon emitter technology is used to develop the high-gain (H_ (FE) up to 250) silicon bipolar transistor at 77K. Emitting region and the base of heavily doped technology, obtained with the CMOS structure compatible, base resistance smaller silicon cryogenic bipolar transistor.