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实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO:Al2O3陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10-4Ω·cm,加入氢气后薄膜的电阻率降低至4.435×10-4Ω·cm.在Raman测试结果中,可以观察到表征氧空位缺陷的Raman峰(579-1cm)强度随氢气流量的增大而减小.与AZO薄膜相比,在氢气氛中溅射制备的AZO/H薄膜,腐蚀后更容易获得具有陷光效应的“弹坑”状表面形貌.
In order to further improve the optoelectronic properties of AZO thin films, a certain flow rate of hydrogen was added during the sputtering process, and a high-purity ZnO: Al2O3 ceramic target was used as a sputtering target The AZO / H transparent conductive thin film was prepared by measuring the influence of hydrogen flow rate on the properties of AZO thin film by testing the structural characteristics, surface morphology and optical properties of the thin film.The introduction of hydrogen during the sputtering process can promote the Crystallization, to improve the mobility and transmittance of the film (400-1100nm). The resistivity of AZO film prepared by pure argon sputtering was 5.664 × 10-4Ω · cm, the resistivity of the film decreased to 4.435 × 10-4 Ω · cm. In the Raman test results, it was observed that the intensity of the Raman peak (579-1 cm) characterizing the oxygen vacancy defects decreases with increasing hydrogen flow rate. In comparison with the AZO thin film, sputtering in a hydrogen atmosphere The prepared AZO / H thin film can be easily found to have a “crater” -like surface topography after being etched.