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本文报道利用分子束外延(MBE)技术,采用高纯ZnCl_2作掺杂源,成功地进行了n—型ZnSe:Cl的分子束外延生长。n-ZnSe:Cl/p-GaAs异质结构的伏-安(I—V)特性和热探针测试显示外延层呈n型导电特性。反射高能电子衍射(RHEED)和x射线衍散谱测量表明ZnSe:Cl外延层具有较好的晶体质量。
In this paper, molecular beam epitaxy of n-type ZnSe: Cl has been successfully carried out by molecular beam epitaxy (MBE) using high purity ZnCl 2 as doping source. Volt-ampere (I-V) characteristics and thermal probe testing of n-ZnSe: Cl / p-GaAs heterostructures show that the epitaxial layer exhibits n-type conductivity. Reflectance high energy electron diffraction (RHEED) and X-ray diffraction spectroscopy measurements show that the ZnSe: Cl epitaxial layer has better crystal quality.