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GaN纳米材料因具有优异的晶体质量和突出的光学性能及发射性能,日益受到关注。研究了一种利用氢化物气相外延(HVPE)系统生长高质量的Ga N纳米柱的方法。使用镍作为催化剂,在蓝宝石衬底上生长出了GaN纳米柱。在不同生长时间和不同HCl体积流量下制备了多组样品,使用扫描电子显微镜(SEM)、X射线衍射(XRD)和光致发光(PL)谱对样品进行了分析表征。测试结果表明,在较低的HCl体积流量下,生长2 min的样品具有较高的晶体质量和较好的光学性质。讨论了不同生长阶段的GaN纳米结构发光特性的变化规律,认为纳米结构所产生的表面态密度大小差异会造成带边峰位的红移和展宽。
GaN nanomaterials have drawn increasing attention due to their excellent crystal quality and outstanding optical and emission properties. A method of growing high quality Ga N nano-columns using a hydride vapor phase epitaxy (HVPE) system was studied. Using nickel as a catalyst, a GaN nanocolumn was grown on a sapphire substrate. Multiple samples were prepared at different growth times and different HCl volume flow rates. Samples were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and photoluminescence (PL). The test results show that the samples grown for 2 min have higher crystal quality and better optical properties at lower HCl volume flow rates. The variation of luminescence properties of GaN nanostructures at different growth stages is discussed. It is considered that the difference of surface state density caused by nanostructures will result in redshift and broadening of the band edge peaks.