Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

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Visible Vertical|cavity Surface|emitting Lasers(VCSELs)have been designed and fabricated by using metalorganic vapor phase epitaxy. Using the 8λ optical cavities with 3 quantum wells in AlGaInP/AlGaAs VCSELs to reduce the drift leakage current and enhance the model gain, the device can operate continuous wave at wavelength of 670nm.For better performance,a misoriented (100) substrate (6~10° to (110)) has been used to reduce the ordering of AlGaInP.However,as the angle of misorientation increased,the symmetry of the structure became worse.This made it difficult to achieve little aperture device.By using 45° rotated selective oxidation method,a little aperture (1×1μm+2) device with low threshold of 0 25mA can operate continuous wave at room temperature. Visible Vertical | cavity Surface | emitting Lasers (VCSELs) have been designed and fabricated by using metalorganic vapor phase epitaxy. Using the 8λ optical cavities with 3 quantum wells in AlGaInP / AlGaAs VCSELs to reduce the drift leakage current and enhance the model gain, the device can operate a continuous wave at a wavelength of 670 nm. For better performance, a misoriented (100) substrate (6 ~ 10 ° to (110)) has been used to reduce the ordering of AlGaInP. angle of misorientation increased, the symmetry of the structure becomes worse. This made it difficult to achieve little aperture device. By using 45 ° rotated selective oxidation method, a little aperture (1 × 1 μm + 2) device with low threshold of 0 25mA can operate continuous wave at room temperature.
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