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对反射型ＧａＡｓ光控微波开关的结构、实验系统和特性参量进行了研究。实验测出该微波开关的插入损耗低于１ｄＢ，隔离度达到３０ｄＢ。用５０ｎｓ光脉冲照射开关，其开关速度小于１０ｎｓ
The structure, experimental system and characteristic parameters of reflective GaAs photoconductive microwave switch were studied. Experiments show that the microwave switch insertion loss of less than 1dB, isolation of 30dB. With 50ns light pulse irradiation switch, the switching speed of less than 10ns