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The effects of avalanche hot-electron injection on trapping behavior of bulk electron and interface state of rapid thermal nitrided SiO2 film is investigated. It is found that in the dielectric films, besides the generation of the acceptor-type electron trapping, the slow donor-type electron trapping is also generated near interface during avalanche injection.The density of the acceptor electron trapping is much larger than that of donor. Results indicate that in the course of the avalanche injection two fast interface state trappings of the acceptor-type and the donor-type are generated in the interface and the positions of the two trappings in the forbidden band are denoted. The changing relation of the interface state density with avalanche injection is given. In this paper the theoretical analysis of these research results is also made.
The effects of avalanche hot-electron injection on trapping behavior of bulk electron and interface state of rapid thermal nitrided SiO2 film is investigated. It is found that in the dielectric films, besides the generation of the acceptor-type electron trapping, the slow donor- type of trapping is also generated near interface during avalanche injection. The density of the acceptor electron trapping is much larger than that of donor. Results that that in the course of the avalanche injection two fast interface state trappings of the acceptor-type and the donor -type are generated in the interface and the positions of the two trappings in the forbidden band are pronounced. The changing relation of the interface state density with avalanche injection is given. In this paper the theoretical analysis of these research results is also made.