Structural and Raman Analysis of Antimony-Implanted ZnMnO Films

• 作 者: 柯贤文 单福凯 王广甫 刘传胜 付德君
• 机 构: Accelerator Laboratory, Department of Physics and Department of Printing and Packaging,Wuhan Univers
• 出 处: Plasma Science and Technology
• 发表日期: 2010年01期
• 关键词: implanted sputtering photoelectron implantation attributed manganese annealing m

Antimony ions were implanted into ZnMnO films grown on silicon (Si) by radiofrequencymagnetron sputtering. The implanted samples were treated by rapid thermal annealingand investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. Inthe wurtzite of ZnMnO, both manganese (Mn) and stibium (Sb) substituted the lattice position ofzinc (Zn). The ZnMnO films were characterized by Raman scattering at 522 cm~(-1), attributed toa local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm~(-1) and 823 cm~(-1)were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.

Antimony ions were implanted into ZnMnO films grown on silicon (Si) by radiofrequencymagnetron sputtering. The implanted samples were treated by rapid thermal annealing and investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. Inthe wurtzite of ZnMnO, both manganese ( (Zn). The ZnMnO films were characterized by Raman scattering at 522 cm -1, attributed toa local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm -1 and 823 cm -1 were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.