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本文报道一种 LSI掩模制作方法.将剂量为 3 ×10~(15)离子/cm~2的~(31)P~+,用高于 120kV的能量,35-50μA/cm~2的束流密度,注入到涂在玻璃衬底上的 AZ1350光刻胶层中.胶层厚度<4000A|°,且上面制作了IC或LSI的集成电路图形.被注入的胶层完全被硬化,形成明暗反差,暗区能掩蔽紫外光.膜的耐磨度和化学性能可与铬或氧化铬比美.特别是具有低反射、制造工艺简单等优点,是一种有前途的光掩模.
In this paper, a method for fabricating an LSI mask is described, in which a ~ (31) P ~ + dose of 3 × 10 ~ (15) ions / cm ~ 2 and a beam of 35 ~ 50μA / cm ~ The flow density was injected into the AZ1350 photoresist layer coated on a glass substrate with a layer thickness of <4000 A | °, and an IC or LSI integrated circuit pattern was formed on it. The injected glue layer was completely hardened to form light and shade Contrast, the dark area can mask ultraviolet light film wear resistance and chemical properties with chromium or chromium oxide than the United States, especially with low reflection, the manufacturing process is simple, etc., is a promising photomask.