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阐述了0·18μm射频nMOSFET的制造和性能.器件采用氮化栅氧化层/多晶栅结构、轻掺杂源漏浅延伸结、倒退的沟道掺杂分布和叉指栅结构.除0·18μm的栅线条采用电子束直写技术外,其他结构均通过常规的半导体制造设备实现.按照简洁的工艺流程制备了器件,获得了优良的直流和射频性能:阈值电压0·52V,亚阈值斜率80mV/dec ,漏致势垒降低因子69mV/ V,截止电流0·5nA/μm,饱和驱动电流458μA/μm,饱和跨导212μS/μm(6nm氧化层,3V驱动电压)及截止频率53GHz .
The fabrication and performance of a 0.18μm RF nMOSFET are described.The device has a nitride gate oxide / poly gate structure, a lightly doped source / drain shallow extension junction, a retrograded channel doping profile and an interdigitated gate structure. Except for 0 · The 18μm gate lines are fabricated using e-beam direct writing technology, and the other structures are realized by conventional semiconductor manufacturing equipment.According to the simple process flow, devices were fabricated with excellent DC and RF performance: threshold voltage of 0 · 52V, subthreshold slope 80mV / dec, leakage induced barrier reduction factor of 69mV / V, cutoff current of 0.5nA / μm, saturation drive current of 458μA / μm, saturation transconductance of 212μS / μm (6nm oxide layer, 3V drive voltage) and cutoff frequency of 53GHz.