Preparation of high-quality AlN films by two-step method of radio frequency magnetron sputtering

• 作 者: 朱宇清 陈希明 李福龙 李晓伟 杨保和
• 机 构: School of Electronics Information Engineering, Tianjin University of Technology,
• 出 处: Optoelectronics Letters
• 发表日期: 2013年05期
• 关键词: sputtering magnetron nucleation nanometer crystalline roughness annealing arrang

The preparation of nanometer aluminum nitrogen(AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave(SAW) device.We put forward the two-step growth method and the annealing treatment method for the deposition of(100) AlN thin films.The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12:8,the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of(100) AlN/(100) Si films.The root-mean-square(RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.

The preparation of nanometer aluminum nitrogen (AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave (SAW) device. We put forward the two-step growth method and the annealing treatment method for the deposition of (100) AlN thin films. Results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12: 8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low The root-mean-square (RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared to that by common deposition process .