论文部分内容阅读
东芝公司的研究人员认为，２ｍｍ以下的薄栅介质是开发高性能晶体管的最佳材料。这意味着栅材料从现在采用的重掺杂多晶硅栅和ＳｉＯ２栅氧化层向金属栅和高ｋ栅介质材料发展。 金属栅与多晶硅栅相比，其优点是不受栅耗尽效应的影响。高ｋ介质的优点是介质材料具有较高的介质常
Toshiba researchers believe thin-film dielectrics below 2mm are the best materials for developing high-performance transistors. This means that the gate material has evolved from heavily doped polysilicon and SiO2 gate oxide layers now used to metal gate and high-k gate dielectric materials. Metal gate and polysilicon gate compared to its advantages are not affected by the gate depletion effect. The advantage of high-k media is that dielectric materials have a high dielectric constant