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通过对衬底施加负偏压吸引等离子体中的阳离子对衬底轰击 ,从而用射频磁控溅射法在水冷透明绦纶聚脂胶片上制备出相对透过率为 80 %左右、最小电阻率为 6 3× 10 -4 Ωcm、附着良好的ITO(IndiumTinOxide)透明导电膜 .SnO2 最佳掺杂浓度为 7 5 %— 10 % (w .t.) ,最佳氩分压为 0 5— 1Pa.当衬底负偏压为 2 0— 40V时 ,晶粒平均尺寸最大 ,制备出的薄膜的电阻率有最小值 .薄膜为多晶纤锌矿结构 ,垂直于衬底的c轴具有 [2 2 2 ]方向的择优取向 ,随衬底负偏压的增大 ,沿 [4 0 0 ]方向生长的晶相减少 .最佳衬底负偏压取值范围为 2 0— 40V .
By applying a negative bias to the substrate to attract the plasma in the bombardment of the substrate, a radio-frequency magnetron sputtering method is used to prepare a transparent conductive polyester film having a relative transmittance of about 80% and a minimum resistivity Is 6 3 × 10 -4 Ωcm, and the ITO film with good adhesion is indium tin oxide (ITO). The optimum doping concentration of SnO 2 is 75% -10% (w · t ·) When the negative bias voltage of the substrate is 20-40 V, the average grain size is the largest, and the resistivity of the prepared thin film is the smallest.The thin film is of polycrystalline wurtzite structure, and the c-axis perpendicular to the substrate has a [2 2 2] direction, the crystal phase growing along [4 0 0] direction decreases with the increase of substrate negative bias voltage.The optimal substrate negative bias voltage range is 20-40V.