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The detectors of germanium and silicon semiconductors,which have a small atomic volume,a short rise time,and a relative high energy resolution,have been widely used in nuclear radiation detection.Nev- ertheless,the silicon material has a lower atomic number(Z=14),and the germanium material has a nar- row forbidden energy gap(E_g=0.665 eV),which limit their applications in the detection ofγrays and
The detectors of germanium and silicon semiconductors, which have a small atomic volume, a short rise time, and a relative high energy resolution, have been widely used in nuclear radiation detection. Nev- ertheless, the silicon material has a lower atomic number (Z = 14), and the germanium material has a nar- row forbidden energy gap (E_g = 0.665 eV), which limits their applications in the detection of γrays and