论文部分内容阅读
关于高速双极型集成电路和高频晶体管的发射极、金属-氧化物-半导体大规模集成电路的源和漏等所需的在硅中形成浅的高浓度的n型杂质层的方法,最引人注目的是砷的离了注入法。作为砷扩散通常有砷烷的汽相扩散法、将含有砷的溶液涂于片子表面的涂敷扩散法、掺杂氧化物源法以及重掺杂的硅的固-固扩散法等,但从各种方法的试验情况来看,特别对于微细图形浅结的控制和器件制造工艺过程的共通性方面而言,看来最优越的方法要算砷的离子注入法。与上述各种热扩散法相比,砷的离子注入法耗源量少,操作也比较容易,从防护措施上来说也是一个好方法。如以前所指出的那样,砷之
As for the method of forming a shallow, high-concentration n-type impurity layer in silicon, which is required for the emitter of a high-speed bipolar integrated circuit and a high-frequency transistor, the source and drain of a metal-oxide semiconductor large-scale integrated circuit, Notable is the departure of arsenic from injection. As a general arsenic diffusion arsenic vapor phase diffusion method, a solution containing arsenic coated on the surface of the film diffusion method, the source of doped oxides and heavily doped silicon solid-solid diffusion method, etc., but from In all cases, the most superior method seems to be arsenic ion implantation, especially for the control of shallow traces and the commonality of device fabrication processes. Compared with the above-mentioned various thermal diffusion methods, the arsenic ion implantation method consumes a small amount of energy and the operation is relatively easy, and it is also a good method from the protective measures. As pointed out earlier, arsenic