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由自由载流子吸收下的样品透过率测量了HgCdTe导电类型、载流子浓度和吸收截面,该法属种非接触、无损伤测量,并能得到测量参数分布状况。这项工作是与光调制红外吸收技术测量HgCdTe少数载流子寿命同时完成的。我们有效地解决了用激光光源作为探针光
The HgCdTe conductivity type, carrier concentration and absorption cross section were measured by the sample transmittance under the absorption of free carriers. The method was non-contact and nondestructive, and the distribution of measurement parameters was obtained. This work was done at the same time as the light-modulated infrared absorption technique to measure the minority carrier lifetime of HgCdTe. We effectively solved the use of laser light source as a probe light