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我们发现,隐埋月牙形(BC)InGaAsP/InP激光器的退化是在液相外延生长期间,将形成p-n结的表面在接触溶液之前暴露在高温H_2中而引起的。为了消除退化,而制作了一种新结构的BC激光器,并获得了80℃下稳定连续的工作。
We found that the degradation of a buried crescent (BC) InGaAsP / InP laser was caused by exposure of the surface forming the p-n junction to high temperature H 2 prior to contact with the solution during liquid phase epitaxial growth. In order to eliminate the degradation, a new type of BC laser was fabricated and obtained a stable and continuous operation at 80 ° C.