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在有效质量近似条件下研究了垂直耦合的自组织InAs GaAs量子点的激子态 .在绝热近似条件下 ,采用传递矩阵方法计算了电子和空穴的能谱 .通过哈密顿量矩阵的对角化 ,对电子和空穴间的库仑相互作用进行了精确处理 .讨论了两量子点间的垂直距离对激子基态能的影响 .从基态波函数概率分布的角度 ,讨论了激子的束缚能 .计算了重空穴和轻空穴激子的基态能随外部垂直磁场变化的函数关系 .计算了量子点大小 (量子点半径 )对激子能的影响 .
The exciton states of the vertically coupled self-organized InAs GaAs QDs were investigated under the conditions of an effective mass approximation. The energy spectra of electrons and holes were calculated using the transfer matrix method under the adiabatic approximation. By the diagonal of the Hamiltonian matrix The Coulomb interaction between electrons and holes is precisely treated.The influence of the vertical distance between two quantum dots on the ground state energy of the exciton is discussed.Starting from the probability distribution of the ground state wave function, The effect of the quantum dot size (quantum dot radius) on the exciton energy has been calculated as a function of the change of the ground state energy of the heavy and light hole excitons with the external vertical magnetic field.