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我们叙述一种新型的环形p-i-n In_(0.53)Ga_(0.47)As/InP光电探测器,该探测器光谱响应范围是1.0~1.6μm。这种探测器的几何结构是:穿过整个芯片厚度,腐蚀构成直径为150μm的直壁圆孔,且要与直径为430μm的台面同心。当光入射到1.5×10~(-3)cm~2环形台面上被接收时,圆孔要允许穿过二极管而聚焦后的光的传输。这种器件的几何形状可以用于正面激光监视器、纤维分路接头以及在诸如光盘存储读出等许多背向散射应用中,它均能成为一种新的低损耗、无耦合器传输系统的关键元件,这些都将给予讨论。
We describe a new type of p-i-n In_ (0.53) Ga_ (0.47) As / InP photodetector with a spectral response range of 1.0 ~ 1.6μm. The geometry of this detector is such that the entire thickness of the chip is etched to form a straight-walled circular hole of 150 μm in diameter and concentric with the 430 μm diameter mesa. When light is incident on a toroidal mesa of 1.5 × 10 -3 cm 2, the circular hole allows transmission of the light after focusing through the diode. The geometry of this device can be used as a front-end laser monitor, fiber shunt connector, and in many backscatter applications such as optical disc storage readouts, to become a new low loss, couplerless transmission system These are the key components that will be discussed.