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一、 引言 非晶硅(α-Si)肖特基二极管是最基本的太阳能电池,但要从理论上计算其电学参数是比较困难的,因为必须知道材料能隙中的定域态密度分布g(E)。1972年以来虽已发展了多种技术(FE,SCLC,DLTS等)来测定g(E),但是没有一种方法是完善的,而且在分布形式和数值上的差别都显得很大,这给器件分析带来了困难。因而人们以传统的利用模型来研究隙态密度,对g(E)引入了各种各样的数学模型。但目前尚无足够的证据说明何种模型是正确的,所以在α-Si器件分析中只能靠直觉来选择模型,而且往往有所困惑。 本文提出了计算α-Si肖特基二极管电学参数的一种新方法,可以在不知道g(E)的具体分布形式下,计算出其电学参数,而且也不涉及选择模型的问题。
I. INTRODUCTION Amorphous silicon (a-Si) Schottky diodes are the most basic solar cells, but calculating their electrical parameters theoretically is difficult because of the need to know the distribution of localized density of states in the material’s energy gap (E). Although various techniques (FE, SCLC, DLTS, etc.) have been developed since 1972 for the determination of g (E), none of them is perfect, and the differences in distribution and numerical values are significant, giving Device analysis has caused difficulties. Therefore, people used the traditional model to study the density of states, and introduced various mathematical models for g (E). However, at present, there is not enough evidence to prove which model is correct, so the model can only be selected by intuition in α-Si device analysis, and it is often confused. In this paper, a new method for calculating the electrical parameters of α-Si Schottky diodes is proposed, which can calculate its electrical parameters without knowing the specific distribution of g (E), and it does not involve the problem of selecting the model.