论文部分内容阅读
英国标准电信实验室研制了三端耿氏器件。此器件有源区上有一附加的接触用来触发,使其适于高速开关应用。这第三控制电极产生一个额外的自由度,并使通常用掺杂控制的某些接触性质可以用电来控制。器件有一均匀掺杂的有源电子转移层,在其上生长一晶体管结构,以控制在阴极注入的电子电流的大小.器件在减低高度的波导装置中用作微波振荡器,但在14千兆赫仅得到0.4毫瓦。效
British standard telecommunications laboratory developed a three-terminal Gunn device. There is an additional contact on the active area of this device for triggering, making it suitable for high speed switching applications. This third control electrode creates an additional degree of freedom and allows some of the contact properties normally controlled by doping to be controlled by electricity. The device has a uniformly doped active electron transport layer on which a transistor structure is grown to control the amount of electron current injected at the cathode.The device acts as a microwave oscillator in the reduced height waveguide but at 14 GHz Only got 0.4 milliwatts. effect