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Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6 ×103 A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an “intermixing layer” at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth-profiles is about 8-10 nm.
Ta / NiO / NiFe / Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6 × 10 3 A / m at a NiO film thickness of The composition and chemical states at interface region of Ta / NiO / Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an “intermixing layer” at the The interface of Ni / NiO (and NiO / Ta) due due a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This thickness of Ni + NiO estimated by XPS depth-profiles is about 8 -10 nm.