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一、前言直拉硅单晶中的氧原子,一般含量为10~17～10~18厘米~(-3),这些氧原子一方面能抑制器件制作过程中位错的产生;另一方面能通过内吸除效应,把硅晶体中的有害杂质吸除。同时氧沉淀在硅晶体中,能增强晶体的机械强度,减少高温扩散中的硅片翘曲形变,所以集成电路中广泛采用直拉硅单晶。但直拉硅单晶存在着坩埚沾污和氧的有害效应,即氧施主问题,不容易拉出高电阻率的晶体,也就不能制作高电压的器件。
I. Introduction Czochralski silicon atoms in the oxygen, the general content of 10 ~ 17 ~ 10 ~ 18 cm ~ (-3), these oxygen atoms on the one hand can inhibit the production of dislocations in the device production; the other hand can Absorption of harmful impurities in silicon crystals by suction effect. At the same time oxygen precipitation in silicon crystals, can enhance the mechanical strength of the crystal, reducing the high temperature diffusion in silicon warping deformation, so widely used in integrated circuits Czochralski silicon. However, Czochralski silicon has the harmful effects of crucible contamination and oxygen, that is, the oxygen donor problem, and it is not easy to pull out the high-resistivity crystal and can not make high-voltage devices.