【摘 要】
：
介绍了一种宽带放大器芯片,该放大器的工作频率覆盖了2～12 GHz,采用砷化镓(GaAs)赝配高电子迁移率晶体管(PHEMT)单片电路工艺实现。在一个宽带负反馈放大器的前面集成了一个幅
【机 构】
：
中国电子科技集团公司第十三研究所,
论文部分内容阅读
介绍了一种宽带放大器芯片,该放大器的工作频率覆盖了2～12 GHz,采用砷化镓(GaAs)赝配高电子迁移率晶体管(PHEMT)单片电路工艺实现。在一个宽带负反馈放大器的前面集成了一个幅度均衡器,使放大器的增益在整个带内具有7 dB的正斜率,频率低端(2 GHz)增益为3 dB,高端(12 GHz)为10 dB,输入输出电压驻波比为1.6∶1,饱和输出功率为20 dBm,芯片尺寸为2.0 mm×1.5 mm×0.1 mm。详细描述了电路的设计流程,并对最终的测试结果进行了分析。该芯片具有频带宽、体积小、使用方便的特点,可作为增益块补偿微波系统中随着频率升高而产生的增益损失。
A wideband amplifier chip is introduced. Its operating frequency covers 2 ~ 12 GHz and is realized by a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) monolithic circuit technology. An amplitude equalizer is integrated in front of a wideband negative feedback amplifier to provide a gain amplifier with a positive slope of 7 dB across the band, a 3 dB gain at 2 GHz and a 10 dB gain at 12 GHz The input / output VSWR is 1.6: 1, the saturation output power is 20 dBm, and the chip size is 2.0 mm × 1.5 mm × 0.1 mm. Described in detail the circuit design process, and the final test results were analyzed. The chip has the characteristics of frequency bandwidth, small size and easy to use, and can be used as a gain block to compensate for the gain loss in the microwave system as the frequency increases.
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