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用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ,低噪声和高增益等特点。本文研究了具有 In Ga As/Ga As双沟道和独特掺杂分布的低噪声高增益 HFET。
InGaAs / GaAs heterojunction materials were grown by molecular beam epitaxy and their properties were studied by HALL effect and electrochemical C-V distribution. The advantages of In GaAs / GaAs YFETs are discussed. Compared with Ga As MESFETS or HEMT, HFET has no low-temperature characteristics, low noise and high gain because it has no Al component. In this paper, a low-noise, high-gain HFET with dual-channel InGaAs / GaAs doping and unique doping distribution has been investigated.