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广泛地研究了GaAs MESFET在栅偏置和衬底偏置下的长期漂移现象,目的在于发现产生此漂移现象的主要原因是表面还是外延衬底界面。观察到栅偏置下通常的漏电流漂移的激活能分散大,随漂移量而异,从0.16变到0.8eV,而衬底偏置所引起漂移的激活能始终为一常数0.82eV,栅偏置下的一般漂移及其激活能受到表面状态的很大影响,而衬底偏置下的漂移不受表面状态的影响,对每一情况,高频参数的变化也是不同的,这些结果表明,过去经常观察到的GaAs MESFET性能的漂移主要受表面状态(可能是表面上的可动电荷)的支配。
The long-term drift of GaAs MESFETs under gate bias and substrate bias has been extensively studied with the aim of discovering that the main cause of this drift is the surface or epitaxial substrate interface. It is observed that the activation energy of the usual leakage current drift under the gate bias is large and varies with the drift from 0.16 to 0.8 eV. The activation energy of the drift due to the substrate bias is always a constant of 0.82 eV, The general drift and its activation energy set under the influence of the surface state are greatly affected, while the drift under the bias of the substrate is not affected by the surface state. For each case, the changes of the high frequency parameters are also different. These results show that, The shift in GaAs MESFET performance that was often observed in the past was dominated by the surface state (which may be a surface-moving charge).