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采用x射线双晶衍射、化学腐蚀等方法,研究了Sn、Fe、S等杂质对InP单晶生长位错的影响及位错分布。分析和讨论了关于杂质效应机理的不同解释。
The effects of Sn, Fe and S impurities on dislocation growth and dislocation distribution of InP single crystal were investigated by x-ray double crystal diffraction and chemical etching. Different explanations on the mechanism of impurity effects have been analyzed and discussed.