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The Sr0.95Ba0.05 TiO3 (SBT) nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering.The x-ray diffraction patte and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted.The memristive mechanism is inferred.The mathematical model M(q) =12.3656-267.4038|q(t)| is calculated,where M(q) denotes the memristance depending on the quantity of electric charge,and q(t) denotes the quantity of electric charge depending on the time.The theoretical Ⅰ-Ⅴ characteristics of the SBT nanometer film are obtained by the mathematical model.The results show that the theoretical Ⅰ-Ⅴ characteristics are consistent with the measured Ⅰ-Ⅴ characteristics.Moreover,the mathematical model could guide the research on applications of the memristor.