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报道了用电子束蒸发技术在硅衬底上沉积 ,并于 1 5wt% H2 SO4 ,温度 2 5℃和 4 0 V直流电压条件下阳极氧化铝薄的制备 (膜厚约 4 0 0 nm)。研究了该阳极氧化铝膜的红外吸收光谱 ( FTIR)、光致荧光光谱 ( PL)和荧光激发光谱 ( PLE)。发现其荧光光谱在 2 80～ 50 0 nm范围内由三个主发射带组成 ,其峰值分别位于 3 1 2 nm,3 67nm和 4 49nm。所有这三个 PL带 ,经分析都与阳极氧化铝膜中的氧空位缺陷有关。 3 1 2 nm和 3 67nm的发射带分别来源于与氧空位相关的 F+ ( 1 B→ 1 A)和 F( 3 P→ 1S)中心 ,而 4 49nm带的来源仍须进一步的工作来证明
Reported the deposition of thin anodized aluminum on a silicon substrate by electron beam evaporation and thin film thickness of about 400 nm at 15 wt% H2SO4, 2.5 C and 40 VDC. The infrared absorption spectra (FTIR), photoluminescence (PL) spectra and fluorescence excitation spectra (PLE) of the anodic aluminum oxide films were investigated. The fluorescence spectra were found to be composed of three main emission bands in the range of 280 to 500 nm with peaks at 3 1 2 nm, 3 67 nm and 4 49 nm, respectively. All three PL bands were analyzed for oxygen vacancy defects in the anodized aluminum film. Emission bands at 3 1 2 nm and 3 67 nm originate from the F + (1 B → 1 A) and F (3 P → 1 S) centers associated with oxygen vacancies, respectively, whereas the sources at 4949 nm still require further work to prove