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为了制造象晶体管和集成电路这样的半导体器件,必须经过许多复杂的过程。由于制造过程限制了它们的电学特性,因此,为了发现新的工艺,人们不断地作着刻苦广泛的努力,使器件的性能不断地得到改进。晶体缺陷是影响器件电性能最重要的因素之一。它们有各种不同的类型。即使对晶体管和集成电路使用完美的硅单晶,在制造过程中也要产生许多缺陷。在单晶生长期间产生的典
To fabricate semiconductor devices such as transistors and integrated circuits, many complicated processes have to go through. Due to the manufacturing process that limits their electrical properties, there is a constant effort to find new processes that will make device performance continually improved. Crystal defects are one of the most important factors affecting the electrical performance of a device. They have different types. Even with perfect silicon single crystals for transistors and integrated circuits, there are many drawbacks in the manufacturing process. Code generated during single crystal growth