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针对双极大功率晶体管批量生产时,存在的晶体管基极-集电极(BC)之间正向压降偏大且一致性较差的现象,对影响功率晶体管BC正向压降的因素进行了分析,并进行了相应的工艺实验,优化了工艺条件。实验结果表明,影响功率晶体管BC结正向压降的是背面减薄工艺和背面金属化工艺前的清洗工艺,芯片背表面的状态是影响器件BC正向压降的主要因素,优化后功率晶体管的BC正向压降优于指标要求,提高了批次间芯片参数的一致性,确保了双极大功率晶体管的工作稳定性。
For the mass production of bipolar high power transistors, there is a phenomenon that the forward voltage drop between the base and the collector (BC) of the transistor is large and the consistency is poor. Factors affecting the forward voltage drop of the power transistor BC Analysis, and carried out the corresponding process experiments, optimizing the process conditions. The experimental results show that the forward voltage drop of the BC junction of the power transistor is the backside thinning process and the cleaning process before the backside metallization process. The status of the back surface of the chip is the main factor affecting the forward voltage drop of the BC device. After the optimized power transistor The forward voltage drop of BC is better than the index requirement, which improves the consistency of the chip parameters between batches and ensures the working stability of the bipolar high power transistor.