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SIT是一种场效应晶体管,当前国内外共有三种结构类型:埋栅结构、表面栅结构和垂直沟栅结构。后者优于前两者。前几年GTE报导了用垂直沟栅结构SIT研制微波功率器件的设想,至今尚未给出实验结果,其他各国亦未见类似报导。以上三种结构类型SIT与双极型晶体管相比,主要缺点是电流密度偏低。但因电压高,故单管芯功率和双极型晶体管相近。而其优点为:线性好,高低温性能优异,无二次击穿,工作稳定等。
SIT is a field-effect transistor, there are currently three types of structures at home and abroad: buried gate structure, surface gate structure and vertical gate structure. The latter is better than the former two. A few years ago, GTE reported the idea of using vertical trench-gate structure SIT to develop microwave power devices, and no experimental results have been given so far. Other countries have not seen any similar reports. The main drawback of the above three types of structure SIT compared to bipolar transistors is the low current density. However, due to high voltage, single-die power and bipolar transistors are similar. And its advantages are: good linearity, high temperature performance, no secondary breakdown, work stability and so on.